MOSFETs

IPD30N08S2L21ATMA1

Trans MOSFET N-CH 75V 30A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  COMPONENTS

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  75

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  2

• Maximum Continuous Drain Current (A)

  30

• Maximum Drain-Source Resistance (mOhm)

  20.5@10V

• Typical Gate Charge @ Vgs (nC)

  56@10V

• Typical Gate Charge @ 10V (nC)

  56

• Typical Input Capacitance @ Vds (pF)

  1650@25V

• Maximum Power Dissipation (mW)

  136000

• Typical Fall Time (ns)

  11

• Typical Rise Time (ns)

  30

• Typical Turn-Off Delay Time (ns)

  44

• Typical Turn-On Delay Time (ns)

  9

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Automotive

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  15.9@10V|20.6@4.5V

• Mounting

  Surface Mount

• Package Height

  2.3 mm

• Package Width

  6.22 mm

• Package Length

  6.5 mm

• PCB changed

  2

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  DPAK

• Pin Count

  3