MOSFETs

IPB80R290C3AATMA2

Trans MOSFET N-CH 800V 17A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  Yes

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  800

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  3.9

• Maximum Continuous Drain Current (A)

  17

• Maximum Drain-Source Resistance (mOhm)

  290@10V

• Typical Gate Charge @ Vgs (nC)

  88@10V

• Typical Gate Charge @ 10V (nC)

  88

• Typical Input Capacitance @ Vds (pF)

  2300@100V

• Maximum Power Dissipation (mW)

  227000

• Typical Fall Time (ns)

  12

• Typical Rise Time (ns)

  15

• Typical Turn-Off Delay Time (ns)

  72

• Typical Turn-On Delay Time (ns)

  25

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  250@10V

• Maximum Pulsed Drain Current @ TC=25°C (A)

  51

• Mounting

  Surface Mount

• Package Height

  4.4 mm

• Package Width

  9.25 mm

• Package Length

  10 mm

• PCB changed

  2

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  D2PAK

• Pin Count

  3