MOSFETs

IPB65R310CFDATMA2

Trans MOSFET N-CH 650V 11.4A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  LTB

• HTS

  8541.29.00.55

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  650

• Maximum Gate-Source Voltage (V)

  20

• Maximum Gate Threshold Voltage (V)

  4.5

• Maximum Continuous Drain Current (A)

  11.4

• Maximum Drain-Source Resistance (mOhm)

  310@10V

• Typical Gate Charge @ Vgs (nC)

  41@10V

• Typical Gate Charge @ 10V (nC)

  41

• Typical Input Capacitance @ Vds (pF)

  1100@100V

• Maximum Power Dissipation (mW)

  104200

• Typical Fall Time (ns)

  7

• Typical Rise Time (ns)

  7.5

• Typical Turn-Off Delay Time (ns)

  45

• Typical Turn-On Delay Time (ns)

  11

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  4.4

• Package Width

  9.25

• Package Length

  10

• PCB changed

  2

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  D2PAK

• Pin Count

  3