MOSFETs

IPB100N06S205ATMA4

Trans MOSFET N-CH 55V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Obsolete

• HTS

  8541.29.00.95

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  55

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  4

• Operating Junction Temperature (°C)

  -55 to 175

• Maximum Continuous Drain Current (A)

  100

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  4.7@10V

• Typical Gate Charge @ Vgs (nC)

  130@10V

• Typical Gate Charge @ 10V (nC)

  130

• Typical Input Capacitance @ Vds (pF)

  5110@25V

• Maximum Power Dissipation (mW)

  300000

• Typical Fall Time (ns)

  30

• Typical Rise Time (ns)

  31

• Typical Turn-Off Delay Time (ns)

  59

• Typical Turn-On Delay Time (ns)

  21

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Automotive

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  3.7@10V|4@10V

• Maximum Pulsed Drain Current @ TC=25°C (A)

  400

• Mounting

  Surface Mount

• Package Height

  4.4

• Package Width

  9.25

• Package Length

  10

• PCB changed

  2

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  D2PAK

• Pin Count

  3