MOSFETs

IPAN70R360P7SXKSA1

Trans MOSFET N-CH 700V 12.5A 3-Pin(3+Tab) TO-220FP Tube

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  700

• Maximum Gate-Source Voltage (V)

  16

• Maximum Gate Threshold Voltage (V)

  3.5

• Maximum Continuous Drain Current (A)

  12.5

• Maximum Gate-Source Leakage Current (nA)

  1000

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  360@10V

• Typical Gate Charge @ Vgs (nC)

  16.4@10V

• Typical Gate Charge @ 10V (nC)

  16.4

• Typical Gate to Drain Charge (nC)

  6

• Typical Input Capacitance @ Vds (pF)

  517@400V

• Maximum Power Dissipation (mW)

  26500

• Typical Fall Time (ns)

  18

• Typical Rise Time (ns)

  8

• Typical Turn-Off Delay Time (ns)

  100

• Typical Turn-On Delay Time (ns)

  19

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tube

• Typical Drain-Source Resistance @ 25°C (mOhm)

  300@10V

• Maximum Pulsed Drain Current @ TC=25°C (A)

  34

• Mounting

  Through Hole

• Package Height

  16.1(Max)

• Package Width

  4.8(Max)

• Package Length

  10.6(Max)

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-220FP

• Pin Count

  3