MOSFETs
IMZA65R072M1HXKSA1
CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 3–pin package
Infineon Technologies AGCoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMW65R107M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation. This SiC MOSFET comes in a TO247 3-pin package with a cost-effective performance.
Summary of Features
- • Low capacitances
- • Optimized switching behavior at higher currents
- • Commutation robust fast body diode with low reverse recovery charge (Qrr)
- • Superior gate oxide reliability
- • Excellent thermal behavior
- • Increased avalanche capability
- • Works with standard drivers
Benefits
- • High performance, high reliability and ease of use
- • Allows high system efficiency
- • Reduces system cost and complexity
- • Enables smaller system size
- • Works in topologies with continuous hard commutation
- • Fit for high temperature and harsh operations
- • Enables bi-directional topologies
Potential Applications
- • Server
- • Telecom
- • SMPS
- • Solar energy systems
- • Energy storage and battery formation
- • UPS
- • EV charging
- • Motor drives
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Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
NRND
HTS
8541.29.00.55
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Material
SiC
Configuration
Single Dual Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
650
Maximum Gate-Source Voltage (V)
23
Maximum Gate Threshold Voltage (V)
5.7
Maximum Continuous Drain Current (A)
29
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
100
Maximum Drain-Source Resistance (mOhm)
94@18V
Typical Gate Charge @ Vgs (nC)
22@18V
Typical Input Capacitance @ Vds (pF)
744@400V
Typical Reverse Transfer Capacitance @ Vds (pF)
9@400V
Maximum Power Dissipation (mW)
115000
Typical Fall Time (ns)
5.6
Typical Rise Time (ns)
8.6
Typical Turn-Off Delay Time (ns)
21.6
Typical Turn-On Delay Time (ns)
15.2
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Mounting
Through Hole
Package Height
21
Package Width
5
Package Length
15.8
PCB changed
4
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247
Pin Count
4