IMZA65R027M1HXKSA1
CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package
Infineon Technologies AGCoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device’s performance, robustness, and ease of use. The IMZA65R057M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation. Infineon’s SiC MOSFET in TO247 4-pin package reduces parasitic source inductance effects on the gate circuit enabling faster switching and increased efficiency.
Features
• Low capacitances
• Optimized switching behavior at higher currents
• Commutation robust fast body diode with low reverse recovery charge (Qrr)
• Superior gate oxide reliability
• Excellent thermal behavior
• Increased avalanche capability
• Works with standard drivers
• 4-pin package
Benefits
• High performance, high reliability and ease of use
• most performing ~60 mΩ range device in the market
• Allows high system efficiency
• Reduces system cost and complexity
• Enables smaller system size
• Works in topologies with continuous hard commutation
• Fit for high temperature and harsh operations
• Enables bi-directional topologies
Target applications
• Server
• Telecom
• SMPS
• Solar energy systems
• Energy storage and battery formation
• UPS
• EV charging
• Motor drives
Related Products
Infineon releases intermediate RDS(on)s to offer a particularly granular SiC-based MOSFET portfolio.
Find all parts of the portfolio extension in the table below.
Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
NRND
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Single Dual Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
650
Maximum Gate-Source Voltage (V)
23
Maximum Gate Threshold Voltage (V)
5.7
Operating Junction Temperature (°C)
-55 to 175
Maximum Continuous Drain Current (A)
60
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
100
Maximum Drain-Source Resistance (mOhm)
34@18V
Typical Gate Charge @ Vgs (nC)
63@18V
Typical Gate to Drain Charge (nC)
14
Typical Gate to Source Charge (nC)
17
Typical Reverse Recovery Charge (nC)
239
Typical Input Capacitance @ Vds (pF)
2131@400V
Typical Reverse Transfer Capacitance @ Vds (pF)
22@400V
Minimum Gate Threshold Voltage (V)
3.5
Typical Output Capacitance (pF)
244
Maximum Power Dissipation (mW)
227000
Typical Fall Time (ns)
8.4
Typical Rise Time (ns)
4.2
Typical Turn-Off Delay Time (ns)
21.6
Typical Turn-On Delay Time (ns)
21.4
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tube
Typical Drain-Source Resistance @ 25°C (mOhm)
27@18V
Maximum Pulsed Drain Current @ TC=25°C (A)
184
Typical Diode Forward Voltage (V)
4
Typical Gate Plateau Voltage (V)
7.75
Typical Reverse Recovery Time (ns)
102
Typical Gate Threshold Voltage (V)
4.5
Maximum Positive Gate-Source Voltage (V)
23
Mounting
Through Hole
Package Height
21
Package Width
5
Package Length
15.8
PCB changed
4
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247
Pin Count
4
Lead Shape
Through Hole