MOSFETs

IMWH170R1K0M1XKSA1

Trans MOSFET N-CH SiC 1.7KV 5.4A 3-Pin(3+Tab) TO-247 Tube

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8533.21.00.30

• Automotive

  Yes

• PPAP

  No

• Category

  Power MOSFET

• Material

  SiC

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  1700

• Maximum Gate-Source Voltage (V)

  20

• Operating Junction Temperature (°C)

  -55 to 175

• Maximum Continuous Drain Current (A)

  5.4

• Maximum Drain-Source Resistance (mOhm)

  880@15V

• Typical Gate Charge @ Vgs (nC)

  5.5@12V

• Typical Input Capacitance @ Vds (pF)

  233@1000V

• Maximum Power Dissipation (mW)

  70000

• Typical Fall Time (ns)

  23

• Typical Rise Time (ns)

  9

• Typical Turn-Off Delay Time (ns)

  19

• Typical Turn-On Delay Time (ns)

  15

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Mounting

  Through Hole

• Package Height

  21

• Package Width

  5

• Package Length

  15.8

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-247

• Pin Count

  3