MOSFETs

IMW65R072M1HXKSA1

Trans MOSFET N-CH SiC 650V 26A 3-Pin(3+Tab) TO-247 Tube

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  NRND

• HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  SiC

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  650

• Maximum Gate-Source Voltage (V)

  23

• Maximum Gate Threshold Voltage (V)

  5.7

• Operating Junction Temperature (°C)

  -55 to 175

• Maximum Continuous Drain Current (A)

  26

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  100

• Maximum Drain-Source Resistance (mOhm)

  94@18V

• Typical Gate Charge @ Vgs (nC)

  22@18V

• Typical Gate to Drain Charge (nC)

  5

• Typical Gate to Source Charge (nC)

  6

• Typical Reverse Recovery Charge (nC)

  90

• Typical Input Capacitance @ Vds (pF)

  744@400V

• Typical Reverse Transfer Capacitance @ Vds (pF)

  9@400V

• Minimum Gate Threshold Voltage (V)

  3.5

• Typical Output Capacitance (pF)

  86

• Maximum Power Dissipation (mW)

  115000

• Typical Fall Time (ns)

  6

• Typical Rise Time (ns)

  14.6

• Typical Turn-Off Delay Time (ns)

  21.6

• Typical Turn-On Delay Time (ns)

  18.2

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Packaging

  Tube

• Typical Drain-Source Resistance @ 25°C (mOhm)

  72@18V

• Maximum Pulsed Drain Current @ TC=25°C (A)

  69

• Typical Diode Forward Voltage (V)

  4

• Typical Gate Plateau Voltage (V)

  7.5

• Typical Reverse Recovery Time (ns)

  53

• Typical Gate Threshold Voltage (V)

  4.5

• Maximum Positive Gate-Source Voltage (V)

  23

• Mounting

  Through Hole

• Package Height

  21

• Package Width

  5

• Package Length

  15.8

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-247

• Pin Count

  3

• Lead Shape

  Through Hole