MOSFETs

IMW65R048M1HXKSA1

Trans MOSFET N-CH SiC 650V 40A 3-Pin(3+Tab) TO-247 Tube

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  NRND

• HTS

  8541.29.00.55

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Material

  SiC

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  650

• Maximum Gate-Source Voltage (V)

  23

• Maximum Gate Threshold Voltage (V)

  5.7

• Maximum Continuous Drain Current (A)

  40

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  100

• Maximum Drain-Source Resistance (mOhm)

  64@18V

• Typical Gate Charge @ Vgs (nC)

  33@18V

• Typical Input Capacitance @ Vds (pF)

  1118@400V

• Maximum Power Dissipation (mW)

  150000

• Typical Fall Time (ns)

  11.4

• Typical Rise Time (ns)

  12.4

• Typical Turn-Off Delay Time (ns)

  15.4

• Typical Turn-On Delay Time (ns)

  14.6

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Packaging

  Tube

• Mounting

  Through Hole

• Package Height

  21.5(Max)

• Package Width

  5.3(Max)

• Package Length

  16.3(Max)

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-247

• Pin Count

  3