MOSFETs

IMW120R060M1HXKSA1

Trans MOSFET N-CH SiC 1.2KV 36A 3-Pin(3+Tab) TO-247 Tube

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  SiC

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  1200

• Maximum Gate-Source Voltage (V)

  18

• Operating Junction Temperature (°C)

  -55 to 175

• Maximum Continuous Drain Current (A)

  36

• Maximum Drain-Source Resistance (mOhm)

  83@18V

• Typical Gate Charge @ Vgs (nC)

  31@18V

• Typical Input Capacitance @ Vds (pF)

  1060@800V

• Maximum Power Dissipation (mW)

  150000

• Typical Fall Time (ns)

  12

• Typical Rise Time (ns)

  7

• Typical Turn-Off Delay Time (ns)

  13

• Typical Turn-On Delay Time (ns)

  5.7

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Mounting

  Through Hole

• Package Height

  21.1(Max) mm

• Package Width

  5.21(Max) mm

• Package Length

  16.13(Max) mm

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-247

• Pin Count

  3