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MOSFETs

IMLT65R060M2HXTMA1

Trans MOSFET N-CH SiC 650V 40A 16-Pin HDSOP EP T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    SiC
  • Configuration
    Single Octal Drain Seven Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    650
  • Maximum Gate-Source Voltage (V)
    23
  • Operating Junction Temperature (°C)
    -55 to 175
  • Maximum Continuous Drain Current (A)
    40
  • Maximum Drain-Source Resistance (mOhm)
    73@18V
  • Typical Gate Charge @ Vgs (nC)
    18@18V
  • Typical Input Capacitance @ Vds (pF)
    669@400V
  • Maximum Power Dissipation (mW)
    200000
  • Typical Fall Time (ns)
    4.8
  • Typical Rise Time (ns)
    5.6
  • Typical Turn-Off Delay Time (ns)
    13.7
  • Typical Turn-On Delay Time (ns)
    6.3
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Mounting
    Surface Mount
  • Package Height
    2.3
  • Package Width
    10.1
  • Package Length
    9.9
  • PCB changed
    16
  • Standard Package Name
    SO
  • Supplier Package
    HDSOP EP
  • Pin Count
    16
Order Quantity

Documentation and Resources

Datasheets
Design resources