MOSFETs

IMBG40R011M2HXTMA1

Trans MOSFET N-CH SiC 400V 13.4A 8-Pin(7+Tab) D2PAK T/R

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  SiC

• Configuration

  Single Hex Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  400

• Maximum Gate-Source Voltage (V)

  23

• Operating Junction Temperature (°C)

  -55 to 175

• Maximum Continuous Drain Current (A)

  13.4

• Maximum Drain-Source Resistance (mOhm)

  14.4@18V

• Typical Gate Charge @ Vgs (nC)

  85@18V

• Typical Input Capacitance @ Vds (pF)

  2900@200V

• Maximum Power Dissipation (mW)

  3800

• Typical Fall Time (ns)

  9.3

• Typical Rise Time (ns)

  18.3

• Typical Turn-Off Delay Time (ns)

  29.8

• Typical Turn-On Delay Time (ns)

  15.8

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Mounting

  Surface Mount

• Package Height

  4.4

• Package Width

  9.25

• Package Length

  10

• PCB changed

  7

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  D2PAK

• Pin Count

  8

• Family/Series

  IMBG40R011M2HXTMA1

• ROHS Version

  2011/65/EU, 2015/863

• Quantity Packaging

  1000

• MSL

  1