MOSFETs

IMBG120R017M2HXTMA1

Trans MOSFET N-CH SiC 1.2KV 107A 8-Pin(7+Tab) TO-263 T/R

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  SiC

• Configuration

  Single Quint Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  1200

• Maximum Gate-Source Voltage (V)

  23

• Operating Junction Temperature (°C)

  -55 to 175

• Maximum Continuous Drain Current (A)

  107

• Maximum Drain-Source Resistance (mOhm)

  45@18V

• Typical Gate Charge @ Vgs (nC)

  89@18V

• Typical Input Capacitance @ Vds (pF)

  2910@800V

• Maximum Power Dissipation (mW)

  470000

• Typical Fall Time (ns)

  9.4

• Typical Rise Time (ns)

  18.2

• Typical Turn-Off Delay Time (ns)

  14.2

• Typical Turn-On Delay Time (ns)

  7

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  4.4

• Package Width

  9.25

• Package Length

  10

• PCB changed

  7

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-263

• Pin Count

  8