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IGW40N60H3FKSA1|INFINEON|simage
IGW40N60H3FKSA1|INFINEON|limage
IGBT Chip

IGW40N60H3FKSA1

Trans IGBT Chip N-CH 600V 80A 306W 3-Pin(3+Tab) TO-247 Tube

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Channel Type
    N
  • Configuration
    Single
  • Maximum Gate Emitter Voltage (V)
    ±20
  • Maximum Collector-Emitter Voltage (V)
    600
  • Typical Collector-Emitter Saturation Voltage (V)
    1.95
  • Maximum Continuous DC Collector Current (A)
    80
  • Maximum Gate Emitter Leakage Current (uA)
    0.1
  • Maximum Power Dissipation (mW)
    306
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tube
  • Mounting
    Through Hole
  • Package Height
    20.95 mm
  • Package Width
    5.03 mm
  • Package Length
    15.9 mm
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-247
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources