IGBT Chip

IGW03N120H2FKSA1

Trans IGBT Chip N-CH 1200V 9.6A 62.5W 3-Pin(3+Tab) TO-247 Tube

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Obsolete

• HTS

  IGW03N120H2FKSA1

• Automotive

  No

• PPAP

  No

• Channel Type

  N

• Configuration

  Single

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Collector-Emitter Voltage (V)

  1200

• Typical Collector-Emitter Saturation Voltage (V)

  2.4

• Maximum Continuous DC Collector Current (A)

  9.6

• Maximum Gate Emitter Leakage Current (uA)

  0.1

• Maximum Power Dissipation (mW)

  62.5

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tube

• Mounting

  Through Hole

• Package Height

  20.95

• Package Width

  5.3

• Package Length

  15.9

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-247

• Pin Count

  3

• Lead Shape

  Through Hole