Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Unconfirmed
HTS
8541.29.00.55
Category
Power MOSFET
Material
GaN
Configuration
Single Dual Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
80
Maximum Gate-Source Voltage (V)
5.5
Operating Junction Temperature (°C)
-40 to 150
Maximum Continuous Drain Current (A)
23
Maximum Drain-Source Resistance (mOhm)
2.5@5V
Typical Gate Charge @ Vgs (nC)
12@5V
Typical Input Capacitance @ Vds (pF)
1250@40V
Maximum Power Dissipation (mW)
3300
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
150
Mounting
Surface Mount
Package Height
0.98(Max)
Package Width
3
Package Length
5
PCB changed
6
Supplier Package
TSON
Pin Count
6
Order Quantity