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IGB20N60H3ATMA1|INFINEON|limage
IGB20N60H3ATMA1|INFINEON|simage
IGBT Chip

IGB20N60H3ATMA1

Trans IGBT Chip N-CH 600V 40A 170W 3-Pin(2+Tab) D2PAK T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Channel Type
    N
  • Configuration
    Single
  • Maximum Gate Emitter Voltage (V)
    ±20
  • Maximum Collector-Emitter Voltage (V)
    600
  • Typical Collector-Emitter Saturation Voltage (V)
    1.95
  • Maximum Continuous DC Collector Current (A)
    40
  • Maximum Gate Emitter Leakage Current (uA)
    0.1
  • Maximum Power Dissipation (mW)
    170
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    4.4
  • Package Width
    9.25
  • Package Length
    10
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    D2PAK
  • Pin Count
    3
  • Lead Shape
    Gull-wing
Order Quantity

Documentation and Resources

Datasheets
Design resources