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MOSFETs

IGB070S10S1XTMA1

Trans MOSFET N-CH GaN 100V 13A 4-Pin TSON EP T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    GaN
  • Configuration
    Single Dual Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    100
  • Maximum Gate-Source Voltage (V)
    5.5
  • Operating Junction Temperature (°C)
    -40 to 150
  • Maximum Continuous Drain Current (A)
    13
  • Maximum Drain-Source Resistance (mOhm)
    7@5V
  • Typical Gate Charge @ Vgs (nC)
    6.1@5V
  • Typical Input Capacitance @ Vds (pF)
    650@50V
  • Maximum Power Dissipation (mW)
    2600
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Surface Mount
  • Package Height
    0.98(Max)
  • Package Width
    3
  • Package Length
    3
  • PCB changed
    4
  • Supplier Package
    TSON EP
  • Pin Count
    4

Documentation and Resources

Datasheets
Design resources