IGBT Modules
IFS150B12N3E4PB11BPSA1
Trans IGBT Module N-CH 1200V 220A 750W 41-Pin ECONO3-4 Tray
Infineon Technologies AGProduct Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active-Unconfirmed
HTS
8541.29.00.55
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Channel Type
N
Configuration
Hex
Typical Collector-Emitter Saturation Voltage (V)
1.75
Maximum Collector-Emitter Voltage (V)
1200
Maximum Power Dissipation (mW)
750
Maximum Gate Emitter Voltage (V)
±20
Maximum Continuous DC Collector Current (A)
220
Maximum Gate Emitter Leakage Current (uA)
0.1
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
150
Packaging
Tray
Mounting
Screw
Package Height
17
Package Width
62
Package Length
122
PCB changed
41
Supplier Package
ECONO3-4
Pin Count
41