MOSFETs
IAUZ40N06S5N050ATMA1
Trans MOSFET N-CH 60V 86A 8-Pin TSDSON EP T/R Automotive AEC-Q101
Infineon Technologies AGProduct Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
3.4
Maximum Continuous Drain Current (A)
86
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
5@10V
Typical Gate Charge @ Vgs (nC)
23.5@10V
Typical Gate Charge @ 10V (nC)
23.5
Typical Input Capacitance @ Vds (pF)
1692@30V
Maximum Power Dissipation (mW)
71000
Typical Fall Time (ns)
4.6
Typical Rise Time (ns)
1
Typical Turn-Off Delay Time (ns)
8.9
Typical Turn-On Delay Time (ns)
3.8
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tape and Reel
Mounting
Surface Mount
Package Height
1
Package Width
3.3
Package Length
3.3
PCB changed
8
Standard Package Name
SON
Supplier Package
TSDSON EP
Pin Count
8
Order Quantity