MOSFETs

IAUT165N08S5N029ATMA2

Trans MOSFET N-CH 80V 165A 9-Pin(8+Tab) HSOF T/R Automotive AEC-Q101

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Single Seven Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  80

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  3.8

• Maximum Continuous Drain Current (A)

  165

• Maximum Drain-Source Resistance (mOhm)

  2.9@10V

• Typical Gate Charge @ Vgs (nC)

  70@10V

• Typical Gate Charge @ 10V (nC)

  70

• Typical Input Capacitance @ Vds (pF)

  4900@40V

• Maximum Power Dissipation (mW)

  167000

• Typical Fall Time (ns)

  29

• Typical Rise Time (ns)

  9

• Typical Turn-Off Delay Time (ns)

  23

• Typical Turn-On Delay Time (ns)

  13

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Automotive

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  2.9@10V, 2.4@10V

• Mounting

  Surface Mount

• Package Height

  2.3

• Package Width

  10.38

• Package Length

  9.9

• PCB changed

  8

• Tab

  Tab

• Standard Package Name

  SO

• Supplier Package

  HSOF

• Pin Count

  9

• Family/Series

  IAUT165N08S5N029

• ALIAS

  SP001585162

• ROHS Version

  2011/65/EU, 2015/863

• Quantity Packaging

  2000

• MSL

  1