MOSFETs

IAUCN08S7N024TATMA1

Trans MOSFET N-CH 80V 186A T/R Automotive AEC-Q101

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Single Quint Drain Quad Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  80

• Maximum Gate-Source Voltage (V)

  ±20

• Operating Junction Temperature (°C)

  -55 to 175

• Maximum Continuous Drain Current (A)

  186

• Maximum Drain-Source Resistance (mOhm)

  2.44@10V

• Typical Gate Charge @ Vgs (nC)

  54@10V

• Typical Gate Charge @ 10V (nC)

  54

• Typical Input Capacitance @ Vds (pF)

  3730@40V

• Maximum Power Dissipation (mW)

  157000

• Typical Fall Time (ns)

  16

• Typical Rise Time (ns)

  16

• Typical Turn-Off Delay Time (ns)

  21

• Typical Turn-On Delay Time (ns)

  12

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Automotive