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MOSFETs

IAUCN08S7L018ATMA1

Trans MOSFET N-CH 80V 210A T/R Automotive AEC-Q101

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    80
  • Maximum Gate-Source Voltage (V)
    ±20
  • Operating Junction Temperature (°C)
    -55 to 175
  • Maximum Continuous Drain Current (A)
    210
  • Maximum Drain-Source Resistance (mOhm)
    1.8@10V
  • Typical Gate Charge @ Vgs (nC)
    79.9@10V
  • Typical Gate Charge @ 10V (nC)
    79.9
  • Typical Input Capacitance @ Vds (pF)
    4885@40V
  • Maximum Power Dissipation (mW)
    169000
  • Typical Fall Time (ns)
    25
  • Typical Rise Time (ns)
    11
  • Typical Turn-Off Delay Time (ns)
    58.5
  • Typical Turn-On Delay Time (ns)
    9.4
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Supplier Temperature Grade
    Automotive
Order Quantity

Documentation and Resources

Datasheets
Design resources