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HN1B04FUGRLF|TOSHIBA|limage
HN1B04FUGRLF|TOSHIBA|simage
GP BJT

HN1B04FU-GR,LF

Trans GP BJT NPN/PNP 50V 0.15A 200mW 6-Pin US T/R Automotive AEC-Q101

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.21.00.75
  • Automotive
    Yes
  • PPAP
    Unknown
  • Type
    PNP|NPN
  • Category
    Bipolar Small Signal
  • Material
    Si
  • Configuration
    Dual
  • Number of Elements per Chip
    2
  • Maximum Collector-Base Voltage (V)
    50@PNP|60@NPN
  • Maximum Collector-Emitter Voltage (V)
    50
  • Maximum Base-Emitter Voltage (V)
    5
  • Operating Junction Temperature (°C)
    150
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.3@10mA@100mA@PNP|0.25@10mA@100mA@NPN
  • Maximum DC Collector Current (A)
    0.15
  • Minimum DC Current Gain
    200@2mA@6V
  • Maximum Power Dissipation (mW)
    200
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.9
  • Package Width
    1.25
  • Package Length
    2
  • PCB changed
    6
  • Supplier Package
    US
  • Pin Count
    6

Documentation and Resources

Datasheets
Design resources