Arrow Electronic Components Online
HN1B04FEGRLF|TOSHIBA|simage
HN1B04FEGRLF|TOSHIBA|limage
GP BJT

HN1B04FE-GR,LF

Trans GP BJT NPN/PNP 50V 0.15A 100mW 6-Pin ES T/R Automotive AEC-Q101

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.21.00.95
  • Automotive
    Yes
  • PPAP
    Unknown
  • Type
    NPN|PNP
  • Category
    Bipolar Small Signal
  • Material
    Si
  • Configuration
    Dual
  • Number of Elements per Chip
    2
  • Maximum Collector-Base Voltage (V)
    50@PNP|60@NPN
  • Maximum Collector-Emitter Voltage (V)
    50
  • Maximum Base-Emitter Voltage (V)
    5
  • Operating Junction Temperature (°C)
    150
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.25@10mA@100mA@NPN|0.3@10mA@100mA@PNP
  • Maximum DC Collector Current (A)
    0.15
  • Maximum Collector Cut-Off Current (nA)
    100
  • Minimum DC Current Gain
    200@2mA@6V
  • Maximum Power Dissipation (mW)
    100
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Width
    1.2
  • Package Length
    1.6
  • PCB changed
    6
  • Supplier Package
    ES
  • Pin Count
    6

Documentation and Resources

Datasheets
Design resources