Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
LTB
HTS
8541.10.00.80
SVHC
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Single Hex Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
1200
Maximum Gate-Source Voltage (V)
18
Operating Junction Temperature (°C)
-55 to 175
Maximum Continuous Drain Current (A)
10
Maximum Drain-Source Resistance (mOhm)
395@18V
Typical Gate Charge @ Vgs (nC)
10@15V
Typical Input Capacitance @ Vds (pF)
331@800V
Maximum Power Dissipation (mW)
64000
Typical Fall Time (ns)
7
Typical Rise Time (ns)
10
Typical Turn-Off Delay Time (ns)
10
Typical Turn-On Delay Time (ns)
9
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Mounting
Surface Mount
Package Height
4.43
Package Width
9.08
Package Length
10.18
PCB changed
7
Tab
Tab
Supplier Package
TO-263
Pin Count
8