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G2R50MT33K|GENESIC|simage
G2R50MT33K|GENESIC|limage
MOSFETs

G2R50MT33K

Trans MOSFET N-CH SiC 3.3KV 72A 4-Pin(4+Tab) TO-247

GeneSiC Semiconductor
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.10.00.80
  • SVHC
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    SiC
  • Configuration
    Single Dual Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    3300
  • Maximum Gate-Source Voltage (V)
    20
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Continuous Drain Current (A)
    72
  • Maximum Drain-Source Resistance (mOhm)
    50(Typ)@20V
  • Typical Gate Charge @ Vgs (nC)
    340@20V
  • Typical Input Capacitance @ Vds (pF)
    7302@1000V
  • Maximum Power Dissipation (mW)
    519000
  • Typical Fall Time (ns)
    18
  • Typical Rise Time (ns)
    36
  • Typical Turn-Off Delay Time (ns)
    32
  • Typical Turn-On Delay Time (ns)
    74
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Through Hole
  • Package Height
    23.6(Max)
  • Package Width
    5.21(Max)
  • Package Length
    16.13(Max)
  • PCB changed
    4
  • Tab
    Tab
  • Supplier Package
    TO-247
  • Pin Count
    4

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Documentation and Resources

Datasheets
Design resources