IGBT Modules

FZ3600R12HP4HOSA2

Trans IGBT Module N-CH 1200V 4.93KA 19000W 9-Pin IHMB190-2 Tray

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Technology

  Trench

• Channel Type

  N

• Configuration

  Triple

• Typical Collector-Emitter Saturation Voltage (V)

  1.7

• Maximum Collector-Emitter Voltage (V)

  1200

• Maximum Power Dissipation (mW)

  19000

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Continuous DC Collector Current (A)

  4930

• Maximum Gate Emitter Leakage Current (uA)

  0.4

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tray

• Mounting

  Screw

• Package Width

  140

• Package Length

  190

• PCB changed

  9

• Supplier Package

  IHMB190-2

• Pin Count

  9