IGBT Modules

FS660R08A6P2FBBPSA1

Trans IGBT Module N-CH 750V 450A 1053W Automotive AEC-Q101 33-Pin HYBRIDD-1 Tray

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Channel Type

  N

• Configuration

  Hex

• Typical Collector-Emitter Saturation Voltage (V)

  1.25

• Maximum Collector-Emitter Voltage (V)

  750

• Maximum Power Dissipation (mW)

  1053

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Continuous DC Collector Current (A)

  450

• Maximum Gate Emitter Leakage Current (uA)

  0.4

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  175

• Packaging

  Tray

• Mounting

  Screw

• Package Width

  100.5

• Package Length

  154.5

• PCB changed

  33

• Supplier Package

  HYBRIDD-1

• Pin Count

  33