IGBT Chip

FGA25N120ANTDTU

Trans IGBT Chip N-CH 1200V 50A 312W 3-Pin(3+Tab) TO-3PN Rail

onsemi

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Obsolete

• HTS

  8541290095

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  No

• PPAP

  No

• Channel Type

  N

• Configuration

  Single

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Collector-Emitter Voltage (V)

  1200

• Typical Collector-Emitter Saturation Voltage (V)

  2.65

• Maximum Continuous DC Collector Current (A)

  50

• Maximum Gate Emitter Leakage Current (uA)

  0.25

• Maximum Power Dissipation (mW)

  312

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Rail

• Mounting

  Through Hole

• Package Height

  18.9(Max)

• Package Width

  5(Max)

• Package Length

  16.2(Max)

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-3PN

• Pin Count

  3

• Lead Shape

  Through Hole