Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D1, DPAK Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D1, DPAK
Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.10.00.80
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Type
Schottky Diode
Material
SiC
Configuration
Single Dual Cathode
Peak Reverse Repetitive Voltage (V)
650
Maximum Continuous Forward Current (A)
18
Peak Non-Repetitive Forward Surge Current (A)
56
Maximum Forward Voltage (V)
1.75@10A
Peak Reverse Current (uA)
200
Maximum Diode Capacitance (pF)
575(Typ)
Maximum Power Dissipation (mW)
150000
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tape and Reel
Mounting
Surface Mount
Package Height
2.29 mm
Package Width
6.1 mm
Package Length
6.54 mm
PCB changed
2
Tab
Tab
Standard Package Name
TO
Supplier Package
DPAK
Pin Count
3
Lead Shape
Gull-wing