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MOSFETs

FF6MR12W2M1B11BOMA1

Trans MOSFET N-CH 1.2KV 200A 36-Pin Tray

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    FF6MR12W2M1B11BOMA1
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Configuration
    Dual
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    1200
  • Maximum Gate-Source Voltage (V)
    20
  • Maximum Gate Threshold Voltage (V)
    5.55
  • Maximum Continuous Drain Current (A)
    200
  • Maximum Gate-Source Leakage Current (nA)
    400
  • Maximum IDSS (uA)
    600
  • Maximum Drain-Source Resistance (mOhm)
    5.63(Typ)@15V
  • Typical Gate Charge @ Vgs (nC)
    496@15V
  • Typical Input Capacitance @ Vds (pF)
    14700@800V
  • Maximum Power Dissipation (mW)
    20
  • Typical Fall Time (ns)
    30
  • Typical Rise Time (ns)
    18.7
  • Typical Turn-Off Delay Time (ns)
    62.6
  • Typical Turn-On Delay Time (ns)
    20.4
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tray
  • Mounting
    Screw
  • Package Height
    12
  • Package Width
    56.7
  • Package Length
    62.8
  • PCB changed
    36
  • Pin Count
    36

Documentation and Resources

Datasheets
Design resources