IGBT Modules
FF400R33KF2CNOSA1
Trans IGBT Module N-CH 3300V 660A 4800W 10-Pin IHV130-3 Tray
Infineon Technologies AGProduct Technical Specifications
EU RoHS
Not Compliant
ECCN (US)
EAR99
Part Status
Obsolete
HTS
8541.29.00.95
Automotive
Yes
PPAP
Unknown
Channel Type
N
Configuration
Dual
Typical Collector-Emitter Saturation Voltage (V)
3.4
Maximum Collector-Emitter Voltage (V)
3300
Maximum Power Dissipation (mW)
4800
Maximum Gate Emitter Voltage (V)
±20
Maximum Continuous DC Collector Current (A)
660
Maximum Gate Emitter Leakage Current (uA)
0.4
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
125
Packaging
Tray
Mounting
Screw
Package Height
38
Package Width
130
Package Length
160
PCB changed
10
Supplier Package
IHV130-3
Pin Count
10

