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FF400R33KF2CNOSA1|INFINEON|simage
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IGBT Modules

FF400R33KF2CNOSA1

Trans IGBT Module N-CH 3300V 660A 4800W 10-Pin IHV130-3 Tray

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Not Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.29.00.95
  • Automotive
    Yes
  • PPAP
    Unknown
  • Channel Type
    N
  • Configuration
    Dual
  • Typical Collector-Emitter Saturation Voltage (V)
    3.4
  • Maximum Collector-Emitter Voltage (V)
    3300
  • Maximum Power Dissipation (mW)
    4800
  • Maximum Gate Emitter Voltage (V)
    ±20
  • Maximum Continuous DC Collector Current (A)
    660
  • Maximum Gate Emitter Leakage Current (uA)
    0.4
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    125
  • Packaging
    Tray
  • Mounting
    Screw
  • Package Height
    38
  • Package Width
    130
  • Package Length
    160
  • PCB changed
    10
  • Supplier Package
    IHV130-3
  • Pin Count
    10

Documentation and Resources

Datasheets
Design resources