IGBT Modules

FF225R12ME4BOSA1

Trans IGBT Module N-CH 1200V 320A 1050W 11-Pin ECONOD-3 Tray

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Channel Type

  N

• Configuration

  Dual

• Typical Collector-Emitter Saturation Voltage (V)

  1.85

• Maximum Collector-Emitter Voltage (V)

  1200

• Maximum Power Dissipation (mW)

  1050

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Continuous DC Collector Current (A)

  320

• Maximum Gate Emitter Leakage Current (uA)

  0.4

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tray

• Mounting

  Screw

• Package Height

  17 mm

• Package Width

  62 mm

• Package Length

  152 mm

• PCB changed

  11

• Supplier Package

  ECONOD-3

• Pin Count

  11