IGBT Modules

FF200R12KT4HOSA1

Trans IGBT Module N-CH 1200V 320A 1100W 7-Pin 62MM-1 Tray

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• Automotive

  Yes

• PPAP

  Unknown

• Channel Type

  N

• Configuration

  Dual

• Typical Collector-Emitter Saturation Voltage (V)

  1.75

• Maximum Collector-Emitter Voltage (V)

  1200

• Maximum Power Dissipation (mW)

  1100

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Continuous DC Collector Current (A)

  320

• Maximum Gate Emitter Leakage Current (uA)

  0.4

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tray

• Mounting

  Screw

• Package Height

  29 mm

• Package Width

  61.4 mm

• Package Length

  106.4 mm

• PCB changed

  7

• Supplier Package

  62MM-1

• Pin Count

  7