Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
COMPONENTS
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Process Technology
0.18um to 2um
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
25
Maximum Gate-Source Voltage (V)
-8
Maximum Gate Threshold Voltage (V)
1.5
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
0.46
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
1100@4.5V
Typical Gate Charge @ Vgs (nC)
1.1@4.5V
Typical Gate Charge @ 10V (nC)
1.1
Typical Gate to Drain Charge (nC)
0.25
Typical Gate to Source Charge (nC)
0.32
Typical Input Capacitance @ Vds (pF)
63@10V
Typical Reverse Transfer Capacitance @ Vds (pF)
10@10V
Minimum Gate Threshold Voltage (V)
0.65
Typical Output Capacitance (pF)
34
Maximum Power Dissipation (mW)
350
Typical Fall Time (ns)
35
Typical Rise Time (ns)
8
Typical Turn-Off Delay Time (ns)
55
Typical Turn-On Delay Time (ns)
7
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
1220@2.7V|870@4.5V
Maximum Pulsed Drain Current @ TC=25°C (A)
1.5
Typical Diode Forward Voltage (V)
0.89
Typical Gate Plateau Voltage (V)
2
Maximum Diode Forward Voltage (V)
1.2
Typical Gate Threshold Voltage (V)
0.86
Mounting
Surface Mount
Package Height
0.94
Package Width
1.3
Package Length
2.9
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-23
Pin Count
3
Lead Shape
Gull-wing