The ON Semiconductor MOSFET is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. These N-Channel enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. Its maximum power dissipation is 350 mW. The maximum Drain Source Voltage of the product is 25 V and Gate Source Voltage is 8 V. This MOSFET has an operating temperature range of -55°C to 150°C.
Features and Benefits:
• 25 V, 0.68 A Continuous, 2 A Peak
• > RDS(ON) = 0.45 O @ VGS = 4.5 V
• > RDS(ON) = 0.6 O @ VGS= 2.7 V
• Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits, VGS(th) < 1 V Gate-Source Zener for ESD Ruggedness, > 6 kV Human Body Model
• Compact Industry Standard SOT-23 Surface Mount Package
• This Device is Pb-Free, Halogen Free/BFR Free and is RoHS Compliant
Application:
• Cellular phones
• Pagers
Product Technical Specifications
EU RoHS
Compliant
Part Status
Active
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Process Technology
0.18um to 2um
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
25
Maximum Gate-Source Voltage (V)
8
Maximum Gate Threshold Voltage (V)
1
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
0.68
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
450@4.5V
Typical Gate Charge @ Vgs (nC)
1.64@4.5V
Typical Gate to Drain Charge (nC)
0.45
Typical Gate to Source Charge (nC)
0.38
Typical Input Capacitance @ Vds (pF)
50@10V
Typical Reverse Transfer Capacitance @ Vds (pF)
9@10V
Minimum Gate Threshold Voltage (V)
0.65
Typical Output Capacitance (pF)
28
Maximum Power Dissipation (mW)
350
Typical Fall Time (ns)
13
Typical Rise Time (ns)
8.5
Typical Turn-Off Delay Time (ns)
17
Typical Turn-On Delay Time (ns)
3
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
330@4.5V|440@2.7V
Maximum Positive Gate-Source Voltage (V)
8
Maximum Pulsed Drain Current @ TC=25°C (A)
2
Typical Diode Forward Voltage (V)
0.83
Typical Gate Plateau Voltage (V)
1.7
Maximum Diode Forward Voltage (V)
1.2
Typical Gate Threshold Voltage (V)
0.8