Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Obsolete
HTS
FDS8958A
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Dual Dual Drain
Process Technology
0.6um
Channel Mode
Enhancement
Channel Type
N|P
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
30
Maximum Gate-Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
7@N Channel|5@P Channel
Maximum Drain-Source Resistance (mOhm)
28@10V@N Channel|52@10V@P Channel
Typical Gate Charge @ Vgs (nC)
11.4@10V@N Channel|9.6@10V@P Channel
Typical Gate Charge @ 10V (nC)
11.4@N Channel|9.6@P Channel
Typical Input Capacitance @ Vds (pF)
575@15V@N Channel|528@15V@P Channel
Maximum Power Dissipation (mW)
2000
Typical Fall Time (ns)
3@N Channel|9@P Channel
Typical Rise Time (ns)
5@N Channel|13@P Channel
Typical Turn-Off Delay Time (ns)
23@N Channel|14@P Channel
Typical Turn-On Delay Time (ns)
8@N Channel|7@P Channel
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Mounting
Surface Mount
Package Height
1.5(Max)
Package Width
3.9
Package Length
4.9
PCB changed
8
Standard Package Name
SO
Supplier Package
SOIC
Pin Count
8
Lead Shape
Gull-wing