MOSFETs

FDS8858CZ

Trans MOSFET N/P-CH 30V 8.6A/7.3A 8-Pin SOIC T/R

onsemi

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Dual Dual Drain

• Process Technology

  0.35um to 2um

• Channel Mode

  Enhancement

• Channel Type

  P|N

• Number of Elements per Chip

  2

• Maximum Drain-Source Voltage (V)

  30

• Maximum Gate-Source Voltage (V)

  ±25@P Channel|±20@N Channel

• Maximum Gate Threshold Voltage (V)

  3

• Operating Junction Temperature (°C)

  -55 to 150

• Maximum Continuous Drain Current (A)

  7.3@P Channel|8.6@N Channel

• Maximum Gate-Source Leakage Current (nA)

  10000

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  17@10V@N Channel|20.5@10V@P Channel

• Typical Gate Charge @ Vgs (nC)

  17@10V@N Channel|33@10V@P Channel

• Typical Gate Charge @ 10V (nC)

  17@N Channel|33@P Channel

• Typical Gate to Drain Charge (nC)

  8.5@P Channel|3.4@N Channel

• Typical Gate to Source Charge (nC)

  2.7@N Channel|6.1@P Channel

• Typical Reverse Recovery Charge (nC)

  22@P Channel|19@N Channel

• Typical Input Capacitance @ Vds (pF)

  1675@15V@P Channel|905@15V@N Channel

• Typical Reverse Transfer Capacitance @ Vds (pF)

  110@15V@N Channel|260@15V@P Channel

• Minimum Gate Threshold Voltage (V)

  1

• Typical Output Capacitance (pF)

  290@P Channel|180@N Channel

• Maximum Power Dissipation (mW)

  2000

• Typical Fall Time (ns)

  16@P Channel|3@N Channel

• Typical Rise Time (ns)

  10@P Channel|3@N Channel

• Typical Turn-Off Delay Time (ns)

  33@P Channel|19@N Channel

• Typical Turn-On Delay Time (ns)

  9@P Channel|7@N Channel

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  15.2@4.5V|12.4@10V@N Channel|26.5@4.5V|17.1@10V@P Channel

• Maximum Power Dissipation on PCB @ TC=25°C (W)

  1.6

• Maximum Pulsed Drain Current @ TC=25°C (A)

  20

• Maximum Junction Ambient Thermal Resistance on PCB (°C/W)

  135

• Typical Diode Forward Voltage (V)

  0.8@N Channel|0.9@P Channel

• Typical Gate Plateau Voltage (V)

  3@N Channel|3.6@P Channel

• Typical Reverse Recovery Time (ns)

  25@N Channel|28@P Channel

• Maximum Diode Forward Voltage (V)

  1.2

• Typical Gate Threshold Voltage (V)

  1.6@N Channel|2.1@P Channel

• Maximum Positive Gate-Source Voltage (V)

  20@N Channel|25@P Channel

• Mounting

  Surface Mount

• Package Height

  1.5(Max)

• Package Width

  3.9

• Package Length

  4.9

• PCB changed

  8

• Standard Package Name

  SO

• Supplier Package

  SOIC

• Pin Count

  8

• Lead Shape

  Gull-wing