MOSFETs

FDS6612A

Trans MOSFET N-CH 30V 8.4A 8-Pin SOIC T/R

onsemi

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Obsolete

• HTS

  8541.29.00.95

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single Quad Drain Triple Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  30

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Continuous Drain Current (A)

  8.4

• Maximum Drain-Source Resistance (mOhm)

  22@10V

• Typical Gate Charge @ Vgs (nC)

  5.4@5V

• Typical Gate Charge @ 10V (nC)

  5.4

• Typical Input Capacitance @ Vds (pF)

  560@15V

• Maximum Power Dissipation (mW)

  2500

• Typical Fall Time (ns)

  3

• Typical Rise Time (ns)

  5

• Typical Turn-Off Delay Time (ns)

  22

• Typical Turn-On Delay Time (ns)

  7

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  1.5(Max)

• Package Width

  3.9

• Package Length

  4.9

• PCB changed

  8

• Standard Package Name

  SO

• Supplier Package

  SOIC

• Pin Count

  8

• Lead Shape

  Gull-wing