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FDN8601|ONSEMI|simage
FDN8601|ONSEMI|limage
MOSFETs

FDN8601

Trans MOSFET N-CH 100V 2.7A 3-Pin SOT-23 T/R

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    100
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    2.7
  • Maximum Drain-Source Resistance (mOhm)
    109@10V
  • Typical Gate Charge @ Vgs (nC)
    3@10V|1.8@5V
  • Typical Gate Charge @ 10V (nC)
    3
  • Typical Input Capacitance @ Vds (pF)
    156@50V
  • Maximum Power Dissipation (mW)
    1500
  • Typical Fall Time (ns)
    3.4
  • Typical Rise Time (ns)
    1.3
  • Typical Turn-Off Delay Time (ns)
    7.8
  • Typical Turn-On Delay Time (ns)
    4.3
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.94
  • Package Width
    1.4
  • Package Length
    2.92
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-23
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources