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FDMQ8403|ONSEMI|limage
FDMQ8403|ONSEMI|simage
MOSFETs

FDMQ8403

Trans MOSFET N-CH Si 100V 3.1A 12-Pin WDFN EP T/R

onsemi
Datasheets 

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Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Quad
  • Process Technology
    0.18um to 2um
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    4
  • Maximum Drain-Source Voltage (V)
    100
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    3.1
  • Maximum Drain-Source Resistance (mOhm)
    110@10V
  • Typical Gate Charge @ Vgs (nC)
    1.7@5V, 3@10V
  • Typical Gate Charge @ 10V (nC)
    3
  • Typical Input Capacitance @ Vds (pF)
    162@50V
  • Maximum Power Dissipation (mW)
    1900
  • Typical Fall Time (ns)
    1.8
  • Typical Rise Time (ns)
    1.2
  • Typical Turn-Off Delay Time (ns)
    7.2
  • Typical Turn-On Delay Time (ns)
    4.1
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.75(Max)
  • Package Width
    4.5
  • Package Length
    5
  • PCB changed
    12
  • Supplier Package
    WDFN EP
  • Pin Count
    12
  • Lead Shape
    No Lead
Order Quantity

Documentation and Resources

Datasheets
Design resources