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FDMC8360L|ONSEMI|simage
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MOSFETs

FDMC8360L

Trans MOSFET N-CH 40V 27A 8-Pin WDFN EP T/R

onsemi
Datasheets 

Product Technical Specifications
  • 欧盟RoHS指令
    Compliant with Exemption
  • 美国出口管制分类ECCN编码
    EAR99
  • 环保无铅
    Active
  • 美国海关商品代码
    8541.29.00.55
  • SVHC
    Yes
  • SVHC超标
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Process Technology
    0.35um to 2um
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    40
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    3
  • Maximum Continuous Drain Current (A)
    27
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    2.1@10V
  • Typical Gate Charge @ Vgs (nC)
    26@4.5V|57@10V
  • Typical Gate Charge @ 10V (nC)
    57
  • Typical Input Capacitance @ Vds (pF)
    4140@20V
  • Maximum Power Dissipation (mW)
    2300
  • Typical Fall Time (ns)
    5.3
  • Typical Rise Time (ns)
    6.7
  • Typical Turn-Off Delay Time (ns)
    38
  • Typical Turn-On Delay Time (ns)
    15
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.75(Max) mm
  • Package Width
    3.3 mm
  • Package Length
    3.3 mm
  • PCB changed
    8
  • Standard Package Name
    DFN
  • Supplier Package
    WDFN EP
  • Pin Count
    8
  • Lead Shape
    No Lead

Documentation and Resources

Datasheets
Design resources