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FDL100N50F|ONSEMI|simage
FDL100N50F|ONSEMI|limage
MOSFETs

FDL100N50F

Trans MOSFET N-CH 500V 100A 3-Pin(3+Tab) TO-264 Tube

onsemi
Datasheets 

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Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    500
  • Maximum Gate-Source Voltage (V)
    ±30
  • Maximum Continuous Drain Current (A)
    100
  • Maximum Drain-Source Resistance (mOhm)
    55@10V
  • Typical Gate Charge @ Vgs (nC)
    238@10V
  • Typical Gate Charge @ 10V (nC)
    238
  • Typical Input Capacitance @ Vds (pF)
    12000@25V
  • Maximum Power Dissipation (mW)
    2500000
  • Typical Fall Time (ns)
    105
  • Typical Rise Time (ns)
    186
  • Typical Turn-Off Delay Time (ns)
    202
  • Typical Turn-On Delay Time (ns)
    63
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tube
  • Mounting
    Through Hole
  • Package Height
    26.4(Max)
  • Package Width
    5.2(Max)
  • Package Length
    20.2(Max)
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-264
  • Pin Count
    3
  • Family/Series
    FDL100N50F
  • ROHS Version
    2011/65/EU, 2015/863
  • Quantity Packaging
    375
Order Quantity

Documentation and Resources

Datasheets
Design resources