Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
FDH44N50
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Process Technology
0.18um to 2um
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
500
Maximum Gate-Source Voltage (V)
±30
Maximum Gate Threshold Voltage (V)
4
Operating Junction Temperature (°C)
-55 to 175
Maximum Continuous Drain Current (A)
44
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
25
Maximum Drain-Source Resistance (mOhm)
120@10V
Typical Gate Charge @ Vgs (nC)
90@10V
Typical Gate Charge @ 10V (nC)
90
Typical Gate to Drain Charge (nC)
31
Typical Gate to Source Charge (nC)
24
Typical Reverse Recovery Charge (nC)
14000
Typical Input Capacitance @ Vds (pF)
5335@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
40@25V
Minimum Gate Threshold Voltage (V)
2
Typical Output Capacitance (pF)
645
Maximum Power Dissipation (mW)
750000
Typical Fall Time (ns)
79
Typical Rise Time (ns)
84
Typical Turn-Off Delay Time (ns)
45
Typical Turn-On Delay Time (ns)
16
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tube
Typical Drain-Source Resistance @ 25°C (mOhm)
110@10V
Maximum Pulsed Drain Current @ TC=25°C (A)
176
Typical Diode Forward Voltage (V)
0.9
Typical Gate Plateau Voltage (V)
5
Typical Reverse Recovery Time (ns)
920
Maximum Diode Forward Voltage (V)
1.2
Typical Gate Threshold Voltage (V)
3.15
Maximum Positive Gate-Source Voltage (V)
30
Mounting
Through Hole
Package Height
20.57
Package Width
4.7
Package Length
15.62
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247
Pin Count
3
Lead Shape
Through Hole