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FDG6335N|ONSEMI|simage
FDG6335N|ONSEMI|limage
MOSFETs

FDG6335N

Trans MOSFET N-CH 20V 0.7A 6-Pin SC-88 T/R

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Dual
  • Process Technology
    0.6um
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±12
  • Maximum Continuous Drain Current (A)
    0.7
  • Maximum Drain-Source Resistance (mOhm)
    300@4.5V
  • Typical Gate Charge @ Vgs (nC)
    1.1@4.5V
  • Typical Gate Charge @ 10V (nC)
    1.1
  • Typical Input Capacitance @ Vds (pF)
    113@10V
  • Maximum Power Dissipation (mW)
    300
  • Typical Fall Time (ns)
    1.5
  • Typical Rise Time (ns)
    7
  • Typical Turn-Off Delay Time (ns)
    9
  • Typical Turn-On Delay Time (ns)
    5
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.9
  • Package Width
    1.25
  • Package Length
    2
  • PCB changed
    6
  • Standard Package Name
    SOT
  • Supplier Package
    SC-88
  • Pin Count
    6

Documentation and Resources

Datasheets
Design resources