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FDD306P|ONSEMI|simage
FDD306P|ONSEMI|limage
MOSFETs

FDD306P

Trans MOSFET P-CH 12V 6.7A 3-Pin(2+Tab) DPAK T/R

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    12
  • Maximum Gate-Source Voltage (V)
    ±8
  • Maximum Continuous Drain Current (A)
    6.7
  • Maximum Drain-Source Resistance (mOhm)
    28@4.5V
  • Typical Gate Charge @ Vgs (nC)
    15@4.5V
  • Typical Gate Charge @ 10V (nC)
    15
  • Typical Input Capacitance @ Vds (pF)
    1290@6V
  • Maximum Power Dissipation (mW)
    52000
  • Typical Fall Time (ns)
    41
  • Typical Rise Time (ns)
    8
  • Typical Turn-Off Delay Time (ns)
    34
  • Typical Turn-On Delay Time (ns)
    16
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    2.29
  • Package Width
    6.1
  • Package Length
    6.54
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    DPAK
  • Pin Count
    3
  • Lead Shape
    Gull-wing
Order Quantity

Documentation and Resources

Datasheets
Design resources