Product Technical Specifications
EU RoHS
Compliant
Part Status
Active
Automotive
No
PPAP
No
Category
Power MOSFET
Process Technology
0.18um to 2um
Configuration
Dual
Channel Mode
Enhancement
Channel Type
N|P
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
25
Maximum Gate-Source Voltage (V)
8@N Channel|-8@P Channel
Maximum Continuous Drain Current (A)
0.68@N Channel|0.46@P Channel
Maximum Drain-Source Resistance (mOhm)
450@4.5V@N Channel|1100@4.5V@P Channel
Typical Gate Charge @ Vgs (nC)
1.64@4.5V@N Channel|1.1@4.5V@P Channel
Typical Input Capacitance @ Vds (pF)
50@10V@N Channel|63@10V@P Channel
Maximum Power Dissipation (mW)
900
Typical Fall Time (ns)
13@N Channel|35@P Channel
Typical Rise Time (ns)
8@N Channel|9@P Channel
Typical Turn-Off Delay Time (ns)
17@N Channel|55@P Channel
Typical Turn-On Delay Time (ns)
3@N Channel|7@P Channel
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel