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FDC604P|ONSEMI|simage
FDC604P|ONSEMI|limage
MOSFETs

FDC604P

Trans MOSFET P-CH 20V 5.5A 6-Pin TSOT-23 T/R

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain
  • Process Technology
    0.18um to 2um
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±8
  • Maximum Gate Threshold Voltage (V)
    1.5
  • Maximum Continuous Drain Current (A)
    5.5
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    33@4.5V
  • Typical Gate Charge @ Vgs (nC)
    19@4.5V
  • Typical Gate Charge @ 10V (nC)
    19
  • Typical Input Capacitance @ Vds (pF)
    1926@10V
  • Maximum Power Dissipation (mW)
    1600
  • Typical Fall Time (ns)
    45
  • Typical Rise Time (ns)
    11
  • Typical Turn-Off Delay Time (ns)
    90
  • Typical Turn-On Delay Time (ns)
    13
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.85
  • Package Width
    1.5
  • Package Length
    2.95
  • PCB changed
    6
  • Standard Package Name
    SOT
  • Supplier Package
    TSOT-23
  • Pin Count
    6
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources